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The MS6266 is a 6-channel volume controller IC with gain and attenuation. It uses CMOS technology specially for the low voltage application with low noise, rail-to-rail output. The MS6266 provide an I2C control interface...
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The MS6257 is the stereo audio volume controller IC. It uses CMOS technology specially for the low voltage application with low noise, rail-to-rail output. The MS6257 provide an I2C control interface with gain / attenuat...
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The MS622424 is a high performance, full CMOS, 8K x 24, 192K-bit pipelined static memory. This device is specifically designed for use as a color look-up table in high resolution video display systems. When two of these ...
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The MS5F 6061 is applied to IGBT-Module named 2MBI100U4A-120. VCES(Collector-Emitter voltage)=1200V, VGES(Gate-Emitter voltage)=20V, Collector current(Ic(Tc=25/80)=150/100A; Icp(1ms, Tc=25/80=300/200A; -Ic=100A; -I...
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MS5D3307 is a very good product.Here you can get some information about the maximum ratings.The repetitive peak reverse voltage (VRRM) is 600 V.The average output current (Io) is 20 A at 50Hz Square wave duty =1/2 ...
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The MS5534B is a SMD-hybrid device including a piezoresistive pressure sensor and an ADC-Interface IC. It provides a 16 Bit data word from a pressure and temperature dependent voltage. Additionally the module contains 6 ...
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The MS5534 is a SMD-hybird device including a piezoresistive pressure sensor and an ADC-interface IC. It provides a 16 bit data word from a pressure and temperature dependent voltage. Additionally the module contains 6 r...
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The MS52C182A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable 1Mb static RAM and 524,288-word by 16-bit / 1,048,576-word by 8-bit electrically switchable 8Mb One Time PROM featuring 2.7V to 3...
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The MS52C181A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 1,048,576-word by 8-bit electrically switchable 8Mb One Time PROM featuring 2.7V to 3.6V power supply operation and direct LVTTL input / ...
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The MS52C1161A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 2,097,152-word by 8-bit electrically switchable 16Mb One Time PROM featuring 2.7V to 3.6V power supply operation and direct LVTTL input ...
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THE MS3421 IS IDEALLY SUITED FOR LOW VOLTAGE OPERATION IN THE 2-4 GHz FREQUENCY RANGE WITH POWER LEVELS OF 600 mW TYPICAL AT 3 GHz.
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The MS3303 is a designed specifically for telecommunications applications. Emitter site ballasting provides infinite VSWR capability and internal impedance matching provides superior broadband performance.
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The MS3201 from Novalog is an IrDA 1.0 and 1.2 compliant 115.2 kbps infrared transceiver module ideal for power sensitive personal data transfer applications. Setting a new industry benchmark the MS3201 will operate with...
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THE MS3102 IS A 28V CLASS C SILICON NPN TRANSISTOR DESIGNED FOR INMARSAST AND OTHER 1.65 GHz SATCOMAPPLICATIONS. A GOLD METALLIZED EMITTER BALLASTED DIE GEOMETRY IS EMPLOYED PROVIDING HIGH GAIN AND EFFICIENCY. MS3102 IS ...
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Mfg:INT Pack:SOP D/C:95+ Vendor:Other Category:Other
The VS/MS28F016SV is a high-performance, 16-Mbit (16,777,216-bit) block erasable, non-volatile random access memory, organized as either 1 Mword x 16 or 2 Mbyte x 8. The VS/MS28F016SV includes thirty-two 64-KB (65,536 by...
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The MS2620 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications.This MS2620 device is characterized at 50 sec pulse width and 10% duty c...
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The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz.
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The MS2575 is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and prod...
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The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.
This MS2552 device is capable of withstanding an infinite load VSWR at any phase angle under full rated con...
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The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input...
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The ASI MS2441 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications.
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Mfg:LUCENT Pack:QFP Vendor:Other Category:Other
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The MS2393 is a gold metallized, silicon NPN power transistor. The MS2393 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2393 is packaged in a metal/ceramic p...
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THE MS2285 IS DESIGNED FOR 1030/1090 MHz IFF APPLICATIONS. THE MS2285 CAN BE OPERATED AT DUTY CYCLES UP TO 10% WITH MINIMAL DERATING OF POWER OUTPUT (140W TYPICAL).
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THE MS2284 IS DESIGNED FOR 1030/1090 MHz IFF APPLICATIONS. THE MS2284 CAN BE OPERATED AT DUTY CYCLES UP TO 10% WITH MINIMAL DERATING OF POWER OUTPUT (40W TYPICAL).
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The MS2230004 is designed as one kind of circuit protection thermistors and it has ordering different lead types:inside kinked leads--use-A after ametherm's part # and outside kinked leads--use-B after ametherm's part #(...
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The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
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The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.The MS2213 device is capable of operation over a wide range of pulse widths, duty cycles and temp...
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The MS2212 is designed for specialized avionics applications, including JTIDS where power is providedunder pulse formats utilizing short pulse widths and highburst or overall duty cycles.
Mfg:MICREL Vendor:Other Category:Other
The MS2211 is designed for specialized avionics applications,including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
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The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as gro...
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THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND, HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH WITH MODERATED DUTY CYCLE AND PULSE WIDTH CONSTRAINTS SUCH AS GR...
Mfg:APT Pack:(LX)high-frequency Vendor:Other Category:Other
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUT...
Mfg:MSC Pack:SOP D/C:219 Vendor:Other Category:Other
The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is cap...
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The MS2202 is a low power Class C NPN transistor specifically designed for avionics driver applications. This device is capable of withstanding an :1 load VSWR at any phase angle under full rated conditions. Low RF therm...
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