Features: · REFRACTORY/GOLD METALLIZATION· EMITTER SITE BALLASTED· LOW THERMAL RESISTANCE· INPUT/OUTPUT MATCHING· OVERLAY GEOMETRY· METAL/CERAMIC HERMETIC PACKAGE· POUT = 150 W MIN. WITH 7.5 dB GainPinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissipation * (TC °...
MS2215: Features: · REFRACTORY/GOLD METALLIZATION· EMITTER SITE BALLASTED· LOW THERMAL RESISTANCE· INPUT/OUTPUT MATCHING· OVERLAY GEOMETRY· METAL/CERAMIC HERMETIC PACKAGE· POUT = 150 W MIN. WITH 7.5 dB Gain...
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· REFRACTORY/GOLD METALLIZATION
· EMITTER SITE BALLASTED
· LOW THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· POUT = 150 W MIN. WITH 7.5 dB Gain
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation * (TC °C) |
300 |
|
IC |
Device Current * |
16.5 |
A |
VCC |
Collector - Supply Voltage * |
35 |
V |
TJ |
Junction Temperature (Pulsed RF Operation) |
250 |
°C |
TSTG |
Storage Temperature * |
- 65 to + 200 |
°C |
The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.