MS2213

Features:

·  REFRACTORY/GOLD METALLIZATION
·  EMITTER SITE BALLASTED
·  15:1 VSWR CAPABILITY
·  LOW RF THERMAL RESISTANCE
·  INPUT/OUTPUT MATCHING
·  OVERLAY GEOMETRY
·  METAL/CERAMIC HERMETIC PACKAGE
·  POUT = 30 W MIN. WITH 7.8 dB Gain


Pinout




Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 85°C)	75	w
IC	Device Current *	3.5	A
VCC	Collector Supply Voltage*	40	V
TJ	Junction Temperature(Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to + 200	°C

Description

The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.

The MS2213 device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.

MS2213 Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.