MS2575 Selling Leads, Price trend, MS2575 DataSheet download, circuit diagram from SeekIC.com

Features: ` Refractory/GoldMetal lization` Emitter Site Bal lasted` :1 VSWR Capability`Low ThermalResistance` Input Matching` Overlay Geometry` Metal/Ceramic Hermetic Package`POUT = 35 W Min.` GP = 10.7 dB GainApplication· Avionics ApplicationsPinoutSpecifications Symbol Parameter Valu...

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SeekIC No. : 004427292 Detail

MS2575: Features: ` Refractory/GoldMetal lization` Emitter Site Bal lasted` :1 VSWR Capability`Low ThermalResistance` Input Matching` Overlay Geometry` Metal/Ceramic Hermetic Package`POUT = 35 W Min.` GP =...

MS2575 Data Sheet

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Part Number:: MS2575
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Recent History
What is this?

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US $3.54 - 4.72 / Piece

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Product Details

Description

Features:

` Refractory/GoldMetal lization
` Emitter Site Bal lasted
` :1 VSWR Capability
`Low ThermalResistance
` Input Matching
` Overlay Geometry
` Metal/Ceramic Hermetic Package
`P_OUT = 35 W Min.
` G_P = 10.7 dB Gain

Application

· Avionics Applications

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation (TC 100°C)	150	W
I_C	Device Current*	3.0	A
V_CC	Collector-Supply Voltage*	55	V
T_J	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	-65 to +200	°C

Description

The MS2575 is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The MS2575 is housed in the IMPAC package with internal input atching.

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MS2575

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