Features: `Designed For High Power Pulse IFF, DME,and TACAN Applications`200 W (typ.) IFF 1030 -1090 MHz`150 W (min.) DME 1025- 1150 MHz`140 W (typ.) TACAN 960 1215 MHz`8.2 dB Gain`Refractory Gold Metallization`Ballasting And Low Thermal Resistance For Reliability And Ruggedness`30:1 Load VSWR Ca...
MS2393: Features: `Designed For High Power Pulse IFF, DME,and TACAN Applications`200 W (typ.) IFF 1030 -1090 MHz`150 W (min.) DME 1025- 1150 MHz`140 W (typ.) TACAN 960 1215 MHz`8.2 dB Gain`Refractory Gold ...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 65 | V |
VCES | Collector-Emitter Voltage | 65 | V |
VEBO | Emitter-Base Voltage | 3.5 | V |
IC | Device Current | 11 | A |
PDISS | Power Dissipation | 583 | W |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS2393 is a gold metallized, silicon NPN power transistor. The MS2393 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2393 is packaged in a metal/ceramic package with internal input/output matching, resulting in improved broadband performance and low thermal resistance.