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MS2208

Features: · HERMETIC METAL/CERAMIC PACKAGE· LOW THERMAL RESISTANCE· 10:1 LOAD VSWR CAPABILITY· BALLASTED OVERLAY GEOMETRY· COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissipation * (TC 100) 1360 W IC Device Current * 27 A VCC Col...

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SeekIC No. : 004427265 Detail

MS2208: Features: · HERMETIC METAL/CERAMIC PACKAGE· LOW THERMAL RESISTANCE· 10:1 LOAD VSWR CAPABILITY· BALLASTED OVERLAY GEOMETRY· COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Va...

MS2208 Data Sheet

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Part Number:
MS2208
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/4

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Product Details

Description



Features:

·  HERMETIC METAL/CERAMIC PACKAGE
·  LOW THERMAL RESISTANCE
·  10:1 LOAD VSWR CAPABILITY
·  BALLASTED OVERLAY GEOMETRY
·  COMMON EMITTER CONFIGURATION


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation * (TC  100) 1360 W
IC Device Current * 27 A
VCC Collector - Supply Voltage * 55 V
TJ Junction Temperature (Pulsed RF Operation) 250
TSTG Storage Temperature - 65 to + 200
 


Description

THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES.




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