Features: · HERMETIC METAL/CERAMIC PACKAGE· LOW THERMAL RESISTANCE· 10:1 LOAD VSWR CAPABILITY· BALLASTED OVERLAY GEOMETRY· COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissipation * (TC 100) 1360 W IC Device Current * 27 A VCC Col...
MS2208: Features: · HERMETIC METAL/CERAMIC PACKAGE· LOW THERMAL RESISTANCE· 10:1 LOAD VSWR CAPABILITY· BALLASTED OVERLAY GEOMETRY· COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Va...
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| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation * (TC 100) | 1360 | W |
| IC | Device Current * | 27 | A |
| VCC | Collector - Supply Voltage * | 55 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | |
| TSTG | Storage Temperature | - 65 to + 200 |
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES.