Features: · 255 MHz BANDWIDTH· GOLD METALLIZATION· EMITTER SITE BALLASTED· Pout = 300W MINIMUM· Gp = 7.0 dB· LOW THERMAL RESISTANCE· INPUT/OUTPUT MATCHING· 15:1 VSWR CAPABILITYPinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* 940 w IC...
MS2210: Features: · 255 MHz BANDWIDTH· GOLD METALLIZATION· EMITTER SITE BALLASTED· Pout = 300W MINIMUM· Gp = 7.0 dB· LOW THERMAL RESISTANCE· INPUT/OUTPUT MATCHING· 15:1 VSWR CAPABILITYPinoutSpecifications ...
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Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* | 940 |
w |
IC |
Device Current * |
24 |
A |
VCC |
Collector Supply Voltage* | 50 |
|
TJ |
Junction Temperature |
+200 |
°C |
TSTG |
Storage Temperature |
- 65 to + 200 |
°C |
The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship DME/TACAN. The MS2210 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles
This MS2210 device is capable of withstanding 15:1 VSWR mismatch load conditions at any phase angle under full rated conditions.