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MS2552

Features: `Refractory/Gold Metallization`Emitter Ballasted`Ruggedized VSWR :1 Capability`Input/Output Matching`Overlay Geometry`Metal/Ceramic Hermetic Package`POUT = 325 W Min.`GP = 6.7 dB GainApplication·Avionics ApplicationsPinoutSpecifications Symbol Parameter Value Unit PDISS Powe...

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SeekIC No. : 004427291 Detail

MS2552: Features: `Refractory/Gold Metallization`Emitter Ballasted`Ruggedized VSWR :1 Capability`Input/Output Matching`Overlay Geometry`Metal/Ceramic Hermetic Package`POUT = 325 W Min.`GP = 6.7 dB GainAppl...

MS2552 Data Sheet

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Part Number:
MS2552
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

`Refractory/Gold Metallization
`Emitter Ballasted
`Ruggedized VSWR :1 Capability
`Input/Output Matching
`Overlay Geometry
`Metal/Ceramic Hermetic Package
`POUT = 325 W Min.
`GP = 6.7 dB Gain


Application

·Avionics Applications


Pinout




Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation * (TC 100) 880 W
IC Device Current * 24 A
VCC Collector - Supply Voltage * 55 V
TJ Junction Temperature (Pulsed RF Operation) 250
TSTG Storage Temperature - 65 to + 200



Description

The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

This MS2552 device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.

The MS2552 is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures.




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