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MS2475

Features: · DESIGNED FOR HIGH POWER PULSED IFF· 720 WATTS (min.) IFF 1030 or 1090 MHz· REFRACTORY GOLD METALLIZATION· 6.8 dB MIN. GAIN· LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS· 30:1 LOAD VSWR CAPABILITY AT SPECIFIEDOPERATING CONDITIONS· INPUT MATCHED, COMMON BASE CONFIGURATIONPinoutSp...

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SeekIC No. : 004427288 Detail

MS2475: Features: · DESIGNED FOR HIGH POWER PULSED IFF· 720 WATTS (min.) IFF 1030 or 1090 MHz· REFRACTORY GOLD METALLIZATION· 6.8 dB MIN. GAIN· LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS· 30:1 LOA...

MS2475 Data Sheet

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Part Number:
MS2475
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· DESIGNED FOR HIGH POWER PULSED IFF
· 720 WATTS (min.) IFF 1030 or 1090 MHz
· REFRACTORY GOLD METALLIZATION
· 6.8 dB MIN. GAIN
· LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS
· 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
· INPUT MATCHED, COMMON BASE CONFIGURATION


Pinout

Connection Diagram


Specifications

Symbol
 Parameter
Value
Unit
VCC
 Collector-Supply Voltage*
55
V
IC
 Device Current *(TC 100°C)
45
A
PDISS
 Power Dissipation*
1670
w
TJ
 Junction Temperature
+200
°C
TSTG
 Storage Temperature *
- 65 to + 200
°C



Description

The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and broadband performance.


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