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MRF899

TRANS RF 150W 900MHZ NI-860C3

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SeekIC No. : 004427062 Detail

MRF899: TRANS RF 150W 900MHZ NI-860C3

MRF899 Data Sheet

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Part Number:
MRF899
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

• Specified 26 Volt, 900 MHz Characteristics
        Output Power = 150 Watts (PEP)
        Minimum Gain = 8.0 dB @ 900 MHz, Class AB
        Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
        Maximum Intermodulation Distortion 28 dBc @ 150 Watts (PEP)
• Characterized with Series Equivalent LargeSignal Parameters from 800 to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.




Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 28 Vdc
CollectorEmitter Voltage VCES 60 Vdc
EmitterBase Voltage VEBO 4.0 Vdc
CollectorCurrent - Continuous IC 25 Adc
Total Device Dissipation @ TC = 25
Derate above 25		 PD 230
1.33		 Watts
W/
Storage Temperature Range Tstg 65 to +150



Parameters:

Technical/Catalog InformationMRF899
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)25A
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 1A, 5V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)28V
Gain8dB ~ 9dB
Power - Max230W
Compression Point (P1dB)-
Package / CaseNI-860C3
PackagingBulk
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MRF899
MRF899



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