MRF899 Selling Leads, Price trend , Freescale Semiconductor, MRF899 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 004427062 Detail

MRF899: TRANS RF 150W 900MHZ NI-860C3

MRF899 Data Sheet

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Part Number:: MRF899
Mfg:: Freescale Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/24

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Product Details

Description

Features:

• Specified 26 Volt, 900 MHz Characteristics
        Output Power = 150 Watts (PEP)
        Minimum Gain = 8.0 dB @ 900 MHz, Class AB
        Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
        Maximum Intermodulation Distortion 28 dBc @ 150 Watts (PEP)
• Characterized with Series Equivalent LargeSignal Parameters from 800 to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	V_CEO	28	Vdc
CollectorEmitter Voltage	V_CES	60	Vdc
EmitterBase Voltage	V_EBO	4.0	Vdc
CollectorCurrent - Continuous	I_C	25	Adc
Total Device Dissipation @ TC = 25 Derate above 25	P_D	230 1.33	Watts W/
Storage Temperature Range	T_stg	65 to +150

Parameters:

Technical/Catalog Information	MRF899
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	25A
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 1A, 5V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	28V
Gain	8dB ~ 9dB
Power - Max	230W
Compression Point (P1dB)	-
Package / Case	NI-860C3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MRF899 MRF899

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MRF899

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