MRF7S19100NBR1

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Configuration : Single Dual Drain Dual Gate
Package / Case : TO-272 WB EP
Gate-Source Breakdown Voltage : - 0.5 V, 10 V


Description

The MRF7S19100NBR1 is one kind of the 1930-1990 MHz, 29 W AVG., 28 V single W-CDMA lateral N-channel RF power MOSFETs that designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. It also can be used in class AB and class C for PCN - PCS/cel lular radi o and WLL applications.

Features of the MRF7S19100NBR1 are:(1)100% par tested for guaranteed output power capability; (2)characterized with series equivalent large-signal impedance parameters; (3)internally matched for ease of use; (4)integrated esd protection; (5)designed for digital predistortion error correction systems; (6)200 capable plastic package; (7)rohs compliant; (8)in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel..

The absolute maximum ratings of the MRF7S19100NBR1 can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-0.5 to +10 Vdc;(3)operating voltage:32 to +0 Vdc;(4)storage temperature range:-65 to +200 °C;(5)operating junction temperature:200 °C.If you want to know more information such as the electrical characteristics about the MRF7S19100NBR1,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	MRF7S19100NBR1
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	28V
Current Rating	1A
Package / Case	TO-272-4
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF7S19100NBR1 MRF7S19100NBR1