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MRF6S27085HSR3

Transistors RF MOSFET Power HV6 2700MHZ NCDMA NI780H

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SeekIC No. : 00220238 Detail

MRF6S27085HSR3: Transistors RF MOSFET Power HV6 2700MHZ NCDMA NI780H

MRF6S27085HSR3 Data Sheet

floor Price/Ceiling Price

US $ 36.83~36.83 / Piece | Get Latest Price
Part Number:
MRF6S27085HSR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~188
  • 188~250
  • Unit Price
  • $36.83
  • $36.83
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.6 GHz to 2.7 GHz Gain : 15.5 dB
Output Power : 20 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-780S-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Output Power : 20 W
Gain : 15.5 dB
Frequency : 2.6 GHz to 2.7 GHz
Package / Case : NI-780S-3


Features:

Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 15.5 dB Drain Efficiency ó 23.5% ACPR @ 885 kHz Offset  ó -48 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 350
2		 W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 85 W



Description

MRF6S27085HSR3 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.




Parameters:

Technical/Catalog InformationMRF6S27085HSR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-780S
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation20.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S27085HSR3
MRF6S27085HSR3



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