MRF6S19140HR3

Transistors RF MOSFET Power HV6 28V 29W LDMOS NI880H

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SeekIC No. : 00220618 Detail

MRF6S19140HR3: Transistors RF MOSFET Power HV6 28V 29W LDMOS NI880H

floor Price/Ceiling Price

Part Number:
MRF6S19140HR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.93 GHz to 1.99 GHz Gain : 16 dB
Output Power : 29 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-880-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1.93 GHz to 1.99 GHz
Drain-Source Breakdown Voltage : 68 V
Gain : 16 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Output Power : 29 W
Package / Case : NI-880-3


Features:

Typical 2-carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA,Pout = 29 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 16 dB Drain Efficiency ó 27.5% IM3 @ 2.5 MHz Offset ó -37 dBc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset ó -51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package Applications
Low Gold Plating Thickness on Leads, 40
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 530
3
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 140 W



Description

MRF6S19140HR3 is Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.




Parameters:

Technical/Catalog InformationMRF6S19140HR3
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating900mA
Package / CaseNI-880
PackagingTape & Reel (TR)
Drawing Number375; 465B-03 ; HR; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S19140HR3
MRF6S19140HR3



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