MRF6S21060NR1

Transistors RF MOSFET Power 2170MHZ 14W

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SeekIC No. : 00220409 Detail

MRF6S21060NR1: Transistors RF MOSFET Power 2170MHZ 14W

floor Price/Ceiling Price

Part Number:
MRF6S21060NR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Dual Drain Dual Gate Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 68 V Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Maximum Operating Temperature : + 150 C Package / Case : TO-270 WB EP
Packaging : Reel    

Description

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Single Dual Drain Dual Gate
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Drain-Source Breakdown Voltage : 68 V
Package / Case : TO-270 WB EP


Specifications

Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +68
Vdc
Gate−Source Voltage
VGS
−0.5, +12
Vdc
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
200
°C





Description

The MRF6S21060NR1 is one kind of 2110-2170 MHz, 30 W AVG., 28 V 2xW-CDMA lateral N-channel RF power MOSFETs that designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It can be used in TDMA, CDMA and multicarrier amplifier applications and Class AB fo r PCN - PCS/cel lular radi o and WLL applications.

Features of the MRF6S21060NR1 are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)low gold plating thickness on leads, 40" nominal;(3)designed for lower memory effects and wide instantaneous bandwidth applications;(4)lower thermal resistance package;(5)integrated ESD protection;(6)qualified up to a maximum of 32 VDD operation;(7)internally matched, controlled Q, for ease of use;(8)characterized with series equivalent large-signal impedance parameters.

The absolute maximum ratings of the MRF6S21060NR1 can be summarized as:(1)drain-source voltage:-0.5 to +68 Vdc;(2)gate-source voltage:-0.5 to +12 Vdc;(3)total device dissipation @ TC=25°C:500 W;(4)total derate above 25°C:2.9 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction temperature:200 °C;(7)case operating temperature:150 °C.If you want to know more information such as the electrical characteristics about the MRF6S21060NR1, please download the datasheet in www.seekic.com or www.chinaicmart.com .






Parameters:

Technical/Catalog InformationMRF6S21060NR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating610mA
Package / CaseTO-270-4
PackagingTape & Reel (TR)
Drawing Number375; 1486-03; NR; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S21060NR1
MRF6S21060NR1



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