MRF7S19120NR

The MRF7S19120NR is one kind of 1930-1990 MHz, 36 W AVG., 28 V single W-CDMA lateral N-channel RF power MOSFETs that designed for CDMA base station applications. Also it can be used in Class AB and Class C for all typical cellular base station modulation formats.

Features of the MRF7S19120NR are:(1)in tape and reel. R1 suffix=500 units per 44 mm, 13 inch reel;(2)100% PAR tested for guaranteed output power capability;(3)characterized with series equivalent large-signal impedance parameters;(4)integrated ESD protection;(5)internally matched for ease of use;(6)greater negative gate-source voltage range for improved class C operation;(7)designed for digital predistortion error correction systems;(8)225°C capable plastic package;(9)RoHS compliant.

The absolute maximum ratings of the MRF7S19120NR can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-6.0 to +10 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:225 °C;(5)case operating temperature:150 °C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .