MRF9120LR3

Transistors RF MOSFET Power 120W 880MHZ NI860L FET

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SeekIC No. : 00220653 Detail

MRF9120LR3: Transistors RF MOSFET Power 120W 880MHZ NI860L FET

floor Price/Ceiling Price

Part Number:
MRF9120LR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 865 MHz to 895 MHz Gain : 16 dB
Output Power : 26 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : Case 375B-04 Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Gain : 16 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 865 MHz to 895 MHz
Output Power : 26 W
Package / Case : Case 375B-04


Features:

• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA
         IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
         Output Power - 26 Watts
         Power Gain - 16 dB
         Efficiency - 26%
         Adjacent Channel Power - 
         750 kHz:  -45 dBc @ 30 kHz BW
         1.98 MHz: -60 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.



Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS
- 0.5, +65 Vdc
GateSource Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD 250
1.43
Watts
W/
Storage Temperature Range Tstg 65 to +150
Operating Junction Temperature TJ 200



Description

MRF9120LR3 is Designed for broadband commercial and industrial applications with frequen- cies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment.


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