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MRF6P23190HR6

Transistors RF MOSFET Power HV6 2.3GHZ 40W

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SeekIC No. : 00220658 Detail

MRF6P23190HR6: Transistors RF MOSFET Power HV6 2.3GHZ 40W

MRF6P23190HR6 Data Sheet

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Part Number:
MRF6P23190HR6
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 2.3 GHz to 2.4 GHz Gain : 14 dB
Output Power : 40 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-1230-5 Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 68 V
Gain : 14 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Output Power : 40 W
Package / Case : NI-1230-5
Frequency : 2.3 GHz to 2.4 GHz


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 795
4.5		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C



Parameters:

Technical/Catalog InformationMRF6P23190HR6
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating2.2A
Package / CaseNI-1230
PackagingTape & Reel (TR)
Drawing Number375; 375D-05 ; HR; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6P23190HR6
MRF6P23190HR6



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