MRF6S27085HSR

The MRF6S27085HSR is one kind of 2700 MHz, 20 W AVG., 28 V single N-CDMA lateral N-channel RF power MOSFETs that designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. It can be used in TDMA, CDMA and multicarrier amplifier applications and Class AB fo r PCN - PCS/cel lular radi o and WLL
applications.

Features of the MRF6S27085HSR are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)low gold plating thickness on leads, 40" nominal;(3)designed for lower memory effects and wide instantaneous bandwidth applications;(4)lower thermal resistance package;(5)integrated ESD protection;(6)qualified up to a maximum of 32 VDD operation;(7)internally matched, controlled Q, for ease of use;(8)characterized with series equivalent large-signal impedance parameters;(9)capable of handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 watts CW output power.

The absolute maximum ratings of the MRF6S27085HSR can be summarized as:(1)drain-source voltage:-0.5 to +68 Vdc;(2)gate-source voltage:-0.5 to +12 Vdc;(3)total device dissipation @ TC=25°C:350 W;(4)total derate above 25°C:2 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction temperature:200 °C;(7)CW operation:85 W.If you want to know more information such as the electrical characteristics about the MRF6S27085HSR,please download the datasheet in www.seekic.com or www.chinaicmart.com .