Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 950mA
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Frequency: 880MHz
Supplier Device Package: TO-272 WB-4
Gain: 20.2dB
Power - Output: 27W
Package / Case: TO-272-4
ApplicationN-CDMA Application
• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =950 mA, Pout = 27 Watt Avg., Full Frequency Band (865-895 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain- 20.2 dB
Drain Efficiency- 31%
ACPR @ 750 kHz Offset = -47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,Pout = 60 Watts Avg., Full Frequency Band (865-895 MHz or 921-960 MHz)
Power Gain- 20 dB
Drain Efficiency - 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM-1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =125 Watts, Full Frequency Band (921-960 MHz)
Power Gain - 19 dB
Drain Efficiency - 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,@ f = 880 MHz
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Specifications
|
Rating |
Symbol |
Value |
Unit |
| Drain−Source Voltage |
VDSS |
−0.5, +68 |
Vdc |
| Gate−Source Voltage |
VGS |
−0.5, +12 |
Vdc |
Total Device Dissipation @ TC = 25°C
Derate above 25°C |
PD |
398
2.3 |
W
W/°C |
| Storage Temperature Range |
Tstg |
−65 to +150 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
MRF6S9125MBR1 Data Sheet
