MRF6P21190HR6

Transistors RF MOSFET Power HV6 44W W/CDMA

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SeekIC No. : 00220556 Detail

MRF6P21190HR6: Transistors RF MOSFET Power HV6 44W W/CDMA

floor Price/Ceiling Price

Part Number:
MRF6P21190HR6
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 2.11 GHz to 2.17 GHz Gain : 15.5 dB
Output Power : 44 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-1230-5 Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Gain : 15.5 dB
Frequency : 2.11 GHz to 2.17 GHz
Package / Case : NI-1230-5
Output Power : 44 W


Features:

Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain ó 15.5 dB Drain Efficiency ó 26.5% IM3 @ 10 MHz Offset ó -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ó -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 700
4
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 190 W



Description

MRF6P21190HR6 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.




Parameters:

Technical/Catalog InformationMRF6P21190HR6
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-1230
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation44.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6P21190HR6
MRF6P21190HR6



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