Transistors RF MOSFET Power HV6 44W W/CDMA
MRF6P21190HR6: Transistors RF MOSFET Power HV6 44W W/CDMA
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Configuration : | Dual | Transistor Polarity : | N-Channel | ||
Frequency : | 2.11 GHz to 2.17 GHz | Gain : | 15.5 dB | ||
Output Power : | 44 W | Drain-Source Breakdown Voltage : | 68 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-1230-5 | Packaging : | Reel |
Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain ó 15.5 dB Drain Efficiency ó 26.5% IM3 @ 10 MHz Offset ó -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ó -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 700 4 |
W W/°C |
Storage Temperature Range | Tstg | -65 to +150 | °C |
Operating Junction Temperature | TJ | 200 | °C |
CW Operation | CW | 190 | W |
MRF6P21190HR6 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Technical/Catalog Information | MRF6P21190HR6 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | NI-1230 |
FET Type | N-Channel |
Typical RF Application | CDMA |
Typical RF Application | TDMA |
Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
Power Dissipation | 44.000 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6P21190HR6 MRF6P21190HR6 |