Transistors RF MOSFET Power HV6 WCDMA 22W NI780H
MRF6S19100HR3: Transistors RF MOSFET Power HV6 WCDMA 22W NI780H
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| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Frequency : | 1.93 GHz to 1.99 GHz | Gain : | 16.1 dB | ||
| Output Power : | 22 W | Drain-Source Breakdown Voltage : | 68 V | ||
| Gate-Source Breakdown Voltage : | - 0.5 V, + 12 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | NI-780-3 | Packaging : | Reel |
|
Rating |
Symbol |
Value |
Unit |
| Drain−Source Voltage |
VDSS |
−0.5, +68 |
Vdc |
| Gate−Source Voltage |
VGS |
−0.5, +12 |
Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
398 2.3 |
W W/°C |
| Storage Temperature Range |
Tstg |
−65 to +150 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
| CW Operation |
CW |
100 |
W |
| Technical/Catalog Information | MRF6S19100HR3 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 28V |
| Current Rating | 900mA |
| Package / Case | NI-780 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 465-06 ; HR; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S19100HR3 MRF6S19100HR3 |