MRF7S35120HSR

The MRF7S35120HSR is one kind of 3100-3500 MHz, 120 W peak, 32 V pulsed lateral N-channel RF power MOSFETs that designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Features of the MRF7S35120HSR are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)internally matched, controlled Q, for ease of use;(3)high gain, high efficiency and high linearity;(4)integrated ESD protection;(5)designed for maximum gain and insertion phase flatness;(6)excellent thermal stability;(7)characterized with series equivalent large-signal impedance parameters;(8)RoHS compliant.

The absolute maximum ratings of the MRF7S35120HSR can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-6.0 to +10 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:225 °C;(5)case operating temperature:150 °C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .