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MRF6S18100NBR1

Transistors RF MOSFET Power 1990MHZ 28V

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SeekIC No. : 00220511 Detail

MRF6S18100NBR1: Transistors RF MOSFET Power 1990MHZ 28V

MRF6S18100NBR1 Data Sheet

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Part Number:
MRF6S18100NBR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.8 GHz to 2 GHz Gain : 14.5 dB
Output Power : 100 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : TO-272-4 WB EP Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Output Power : 100 W
Gain : 14.5 dB
Drain-Source Breakdown Voltage : 68 V
Package / Case : TO-272-4 WB EP
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Frequency : 1.8 GHz to 2 GHz


Application

GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout =
   100 Watts, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)
   Power Gain — 14.5 dB
   Drain Efficiency — 49%
   GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
   Pout = 40 Watts Avg., Full Frequency Band (1805-1880 MHz or
   1930-1990 MHz)
   Power Gain — 15 dB
   Drain Efficiency — 35%
   Spectral Regrowth @ 400 kHz Offset = -63 dBc
   Spectral Regrowth @ 600 kHz Offset = -76 dBc
   EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, @ 100 W CW Output Power,
   @ f = 1990 MHz
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 343
1.96		 W
W/°C
Storage Temperature Range Tstg - 65 to +175 °C
Operating Junction Temperature TJ 200 °C



Parameters:

Technical/Catalog InformationMRF6S18100NBR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating2A
Package / CaseTO-272-4
PackagingTape & Reel (TR)
Drawing Number375; 1484-04; NBR; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S18100NBR1
MRF6S18100NBR1



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