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Vendor:Other Category:Other
The TIP140FTU is designed as one kind of silicon planar darlington power transistor that has some points of absolute maximum ratings:(1)Collector-Base Voltage: 60 V;(2)Collector-Emitter Voltage: 60 V;(3)Emitter-Base Volt...
Vendor:Other Category:Other
The TIP140F is designed as the NPN silicon power darlington that has three points of features:(1)collector-emitter sustaining voltage: VCE(sus) = 60 V (min);(2)collector-emitter saturation voltage: VCE(sat) = 2.0 V (max....
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 10A 60V TO218ACTIP140 features
·High DC Current Gain-: hFE = 1000(Min)@ IC= 5A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 60V(Min)·Complement to Type TIP145
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR DARL COMPL TO-220The TIP137 is one kind of the darlington complementary silicon power transistors which designed for general-purpose amplifier and low speed switching applications.It is intented for use in power linear and switching appl...
Vendor:Other Category:Other
TIP136 features
·With TO-220C package·DARLINGTON·Collector saturation voltage·Complement to type TIP130/131/132
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR DARL COMPL TO-220The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.The complemen...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR DARL COMPL TO-220The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.The complemen...
Mfg:ON D/C:06+ Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 8A 80V TO-220AB
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 8A 80V TO-220ABTIP131 features
·High DC Current Gain-: hFE = 1000(Min)@ IC= 4A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 80V(Min)·Low Collector-Emitter Saturation Voltage-: VCE(sat) = 2.0V(Max)@ IC= 4A·Complement to Type TIP1...
Vendor:Other Category:Other
Mfg:ST D/C:03+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 100V 5A TO-220FPThe TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications.The complemen...
Vendor:Other Category:Other
Vendor:Other Category:Other
The TIP127/MOR is designed as one kind of PNP silicon power darlingtons which has four points of features:(1)designed for complementary use with TIP120, TIP121 and TIP122;(2)65 W at 25°C case temperature;(3)5 A continuou...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 100V 5A TO-220The TIP127 is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP120, TIP121 and TIP122;(2)65 W at 25 case temperature;(3)5 A continuous collector cur...
Mfg:ST Pack:02+ D/C:220 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 80V 5A TO-220
Vendor:Other Category:Other
The TIP125A is designed as one kind of Si-Epitaxial Planar transistor that has some points of features:(1)Collector current: 5 A;(2)Plastic case: TO-220AB;(3)Weight approx.: 2.2 g;(4)Plastic material has UL classificatio...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 60V 5A TO-220
Mfg:ST Pack:TOP-220FP D/C:00+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR DARL COMPL TO-220FPThe TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications.The complemen...
D/C:1000 Vendor:Other Category:Other
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 5A 100V TO220ABThe TIP122 is one member of the TIP107 family which is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP125, TIP126 and TIP127;(2)65 W at 25 case te...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN DARL 80V 5A TO-220The TIP121 is designed as one kind of PNP silicon power transistor that has four points of features:(1)Designed for Complementary Use with TIP125, TIP126 and TIP127; (2)65 W at 25°C Case Temperature; (3)5 A Continuous Co...
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 60V 5A TO-220The TIP120TU is one member of the TIP120 family which is designed as the plastic medium power complementary silicon transistors that is designed for generalpurpose amplifier and lowspeed switching applications.
Feature...
Vendor:Other Category:Other
The TIP120A is designed as one kind of PNP silicon power transistor that has four points of features:(1)Designed for Complementary Use with TIP125, TIP126 and TIP127; (2)65 W at 25°C Case Temperature; (3)5 A Continuous C...
Vendor:Other Category:Other
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN DARL 60V 5A TO-220The TIP120 is designed as the NPN silicon power darlington that has four points of features:(1)designed for complementary use with TIP125, TIP126 and TIP127;(2)65 W at 25 case temperature;(3)5 A continuous collector cur...
Vendor:Other Category:Other
Mfg:ST/KA/ON Pack:TO- Vendor:Other Category:Other
Vendor:Other Category:Other
TIP117(PNP) Designed for general−purpose amplifier and low−speed switching applications.
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 100V 2A TO-220
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
TRANS DARL PNP 80V 2A TO-220The TIP116TU is designed as one kind of PNP silicon power transistor that has four points of features:(1)Designed for Complementary Use with TIP110, TIP111 and TIP112; (2)50 W at 25°C Case Temperature; (3)4 A Continuous ...
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL PNP 2A 80V TO-220AB
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 60V 2A TO-220
Mfg:ST/KA/ON Pack:TO- Vendor:Other Category:Other
Vendor:Other Category:Other
TIP112(NPN) Designed for general−purpose amplifier and low−speed switching applications.
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN DARL 100V 2A TO-220TIP112 features
·With TO-220C package·DARLINGTON·High DC current gain·Low collector saturation voltage·Complement to type TIP115/116/117
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 2A 80V TO-220ABTIP111 Designed for general−purpose amplifier and low−speed switching applications.
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
TRANS DARL NPN 60V 2A TO-220The TIP110TU is designed as one kind of PNP silicon power transistor that has five points of features:(1)High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc; (2)High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc; (3)L...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN DARL 60V 2A TO-220TIP110 is Designed for general−purpose amplifier and low−speed switching applications.
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS DARL PNP 8A 100V TO220ABThe TIP107G is one member of the TIP107 family which is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP100, TIP101 and TIP102;(2)80W at 25 case te...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL 100V 8A TO-220
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS BIPO PNP 8A 80V TO-220AB
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS PNP DARL -60V -8A TO-220
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN DARL 100V 8A TO-220
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS BIPO NPN 8A 80V TO-220AB
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS BIPO NPN 8A 60V TO-220ABThe TIP100G is one member of the TIP100 family which is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP105, TIP106 and TIP107;(2)80 W at 25 case t...
Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS BIPO NPN 8A 60V TO-220AB
Vendor:Other Category:Other
Infrared Touch Panels With Controller, RS232C Interface TIP
Vendor:Other Category:Other
Mfg:U-BLOX D/C:592 Vendor:Other Category:Other
The! TIM-LR! is! an! ultra-low!power! sensor-based! dead! reckoning!GPS!module!suitable!for!passive!and!active! antennas.! ! The! combination! of! the! ANTARIS! GPS! positioning! engine! and! the! Enhanced! Kalman! Filte...
Vendor:Other Category:Other
The TIM8596-4 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 8.5 GHz to 9.6 GHz;(2)high gain: G1db = 7.5 dB at 8.5 GHz to 9.6 GHz;(3)broad ba...
Vendor:Other Category:Other
The TIM8596-2 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 33.5 dBm at 8.5 GHz to 9.6 GHz;(2)high gain: G1db = 7.5 dB at 8.5 GHz to 9.6 GHz;(3)broad ba...
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM7785-30SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 45 dBm at 7.7 GHz to 8.5 GHz;(2)high gain: G1db = 6.0 dB at 7.7 GHz to 8.5 GHz;(3)broad b...
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 42.5 dBm at 7.7 GHz to 8.5 GHz;(2)high gain: G1db = 5.0 dB at 7.7 GHz to 8.5 GHz;(3)broad b...
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 45.5 dBm at 6.4 GHz to 7.2 GHz;(2)high gain: G1db = 8.0 dB at 6.4 GHz to 7.2 GHz;(3)broad...
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM5964-8 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 39 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.0 dB at 5.9 GHz to 6.4 GHz;(3)internally...
Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM5964-4A is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.5 dB at 5.9 GHz to 6.4 GHz;(3)interna...
Vendor:Other Category:Other
The TIM5964-45SL is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 46.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 9.0 dB at 5.9 GHz to 6.4 GHz;(3)broad...
Vendor:Other Category:Other
The TIM5964-35SLA-422 is one member of the TIM5964-35SLA family which has six points of features:(1)low intermodulation distortion:IM3=-45 dBc at Po= 35.0dBm, single carrier level;(2)high power:P1dB=45.5dBm at 5.9GHz to ...
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Pack:Transistor Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM5964-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 42.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.0 dB at 5.9 GHz to 6.4 GHz;(3)inter...
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The TIM5359-4 is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 36.0 dBm at 5.3 GHz to 5.9 GHz;(2)high gain: G1db = 9.0 dB at 5.3 GHz to 5.9 GHz;(3)broad ba...
Mfg:Toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
Mfg:Toshiba Vendor:Other Category:Other
© 2008-2012 SeekIC.com Corp.All Rights Reserved.