Features: HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSH...
TIM7785-16UL: Features: HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POW...
Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROA...
DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
ELECTRICAL CHARACTERISTICS ( Ta= 25) | ||||||
CHARACTERISTICS | SYMBOL | CONDITION | UNIT | MIN. | TYP. | MAX. |
Transconductance | gm | VDS= 3V IDS= 6.0A |
mS | - | 3600 | - |
Pinch-off Voltage | VGSoff | VDS= 3V IDS= 60mA |
V | -1.0 | -2.5 | -4.0 |
Saturated Drain Current | IDSS | VDS= 3V VGS= 0V |
A | - | 10.5 | 14.0 |
Gate-Source Breakdown Voltage |
VGSO | IGS= -200µA | V | -5 | - | - |
Thermal Resistance | Rth(c-c) | Channel to Case | /W | - | 1.5 | 1.8 |