TIM5359-4

The TIM5359-4 is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 36.0 dBm at 5.3 GHz to 5.9 GHz;(2)high gain: G1db = 9.0 dB at 5.3 GHz to 5.9 GHz;(3)broad band internally matched;(4)hermetically sealed package.

The electrical characteristics of the TIM5359-4 can be summarized as:(1)transconductance: 900 ms;(2)pinch-off voltage: -2.0 to -5.0 V;(3)saturated drain current: 2.9 to 3.8 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 4.0 to 6.0 /W.

The RF performance speifications of the TIM5359-4 can be concluded into some points:(1)output power at 1 dB compression point: 35.0 to 36.0 dBm;(2)power gain at 1 dB compression point: 8.0 to 9.0 dB;(3)drain current: 1.1 to 1.5 A;(4)power added efficiency: 32 %;(5)channel temperature rise: 80 .

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 4 A;(4)total power dissipation: 20 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM5359-4, please download the datasheet in www.seekic.com or www.chinaicmart.com .