Features: HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHzHIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHI...
TIM4450-4UL: Features: HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHzHIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is p...
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Features: · HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz· BROAD BAND INTERNALLYMATCHED FET·HIGH GAI...
Features: LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level HIGH PO...
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ) | |||
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 3.5 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 23 |
Channel Temperature | Tch | 175 | |
Storage | Tstg | -65 - +175 |