TIP110TU

Transistors Darlington NPN Epitaxial Sil Darl

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SeekIC No. : 00216755 Detail

TIP110TU: Transistors Darlington NPN Epitaxial Sil Darl

floor Price/Ceiling Price

US $ .18~.34 / Piece | Get Latest Price
Part Number:
TIP110TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.34
  • $.28
  • $.24
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 60 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 60 V Maximum DC Collector Current : 2 A
Maximum Collector Cut-off Current : 1000 uA Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Package / Case : TO-220AB
Maximum DC Collector Current : 2 A
Maximum Collector Cut-off Current : 1000 uA


Description

The TIP110TU is designed as one kind of PNP silicon power transistor that has five points of features:(1)High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc; (2)High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc; (3)Low CollectorEmitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc; (4)Monolithic Construction with Builtin BaseEmitter Shunt Resistors; (5)TO220AB Compact Package.

The absolute maximum ratings of the TIP110TU can be summarized as:(1)Collector-base voltage (IE = 0): 60 V;(2)Collector-emitter voltage (IB = 0): 60 V;(3)Emitter-base voltage: 5.0 V;(4)Continuous collector current: 2 A;(5)Continuous base current: 0.4 A;(6)Total Power Dissipation @ TC = 25 Derate above 25 : 50 W;(7)Total Power Dissipation @ TA = 25 Derate above 25 : 2.0 W;(8)Unclamped inductive load energy: 25 mJ;(9)Operating junction temperature range: -65 to +150 °C;(10)Storage temperature range: -65 to +150 °C. If you want to know more information such as the electrical characteristics about the TIP110TU, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationTIP110TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)2A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)2mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIP110TU
TIP110TU



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