Transistors Darlington 8A 60V Bipolar Power NPN
TIP100G: Transistors Darlington 8A 60V Bipolar Power NPN
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Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 60 V | Emitter- Base Voltage VEBO : | 5 V | ||
Collector- Base Voltage VCBO : | 60 V | Maximum DC Collector Current : | 8 A | ||
Maximum Collector Cut-off Current : | 50 uA | Power Dissipation : | 40 W | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
The TIP100G is one member of the TIP100 family which is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP105, TIP106 and TIP107;(2)80 W at 25 case temperature;(3)8 A continuous collector current;(4)Minimum hFE of 1000 at 2.5 V, 8 A.
The absolute maximum ratings of the TIP100G can be summarized as:(1)collector-base voltage: 100 V;(2)collector-emitter voltage: 100 V;(3)emitter-base voltage: 5 V;(4)continuous collector current: 8 A;(5)peak collector current: 15 A;(6)continuous base current: 1 A;(7)continuous device dissipation at (or below) 25 case temperature: 80 W;(8)continuous device dissipation at (or below) 25 free air temperature: 2 W;(9)unclamped inductive load energy: 10 mJ;(10)operating junction temperature range: -65 to +150 ;(11)storage temperature range: -65 to +150 ;(12)lead temperature 3.2 mm from case for 10 seconds: 260 .
The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 100 V;(2)Collector-emitter cut-off current: 50 uA;(3)Collector cut-off current: 50 uA;(4)Emitter cut-off current: 8 mA;(5)Forward current transfer ratio: 1000 or 200;(6)Collector-emitter saturation voltage: 2 or 2.5 V;(7)Base-emitter voltage: 2.8 V;(8)Parallel diode forward voltage: 3.5 V. If you want to know more information such as the electrical characteristics about the TIP100G, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | TIP100G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Vce Saturation (Max) @ Ib, Ic | 2V @ 6mA, 3A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 50A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TIP100G TIP100G TIP100GOS ND TIP100GOSND TIP100GOS |