TIP100G

Transistors Darlington 8A 60V Bipolar Power NPN

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SeekIC No. : 00216721 Detail

TIP100G: Transistors Darlington 8A 60V Bipolar Power NPN

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US $ .29~.5 / Piece | Get Latest Price
Part Number:
TIP100G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.5
  • $.44
  • $.33
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 60 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 60 V Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 50 uA Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 50 uA
Package / Case : TO-220AB


Pinout

  Connection Diagram


Description

The TIP100G is one member of the TIP100 family which is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP105, TIP106 and TIP107;(2)80 W at 25 case temperature;(3)8 A continuous collector current;(4)Minimum hFE of 1000 at 2.5 V, 8 A.

The absolute maximum ratings of the TIP100G can be summarized as:(1)collector-base voltage: 100 V;(2)collector-emitter voltage: 100 V;(3)emitter-base voltage: 5 V;(4)continuous collector current: 8 A;(5)peak collector current: 15 A;(6)continuous base current: 1 A;(7)continuous device dissipation at (or below) 25 case temperature: 80 W;(8)continuous device dissipation at (or below) 25 free air temperature: 2 W;(9)unclamped inductive load energy: 10 mJ;(10)operating junction temperature range: -65 to +150 ;(11)storage temperature range: -65 to +150 ;(12)lead temperature 3.2 mm from case for 10 seconds: 260 .

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 100 V;(2)Collector-emitter cut-off current: 50 uA;(3)Collector cut-off current: 50 uA;(4)Emitter cut-off current: 8 mA;(5)Forward current transfer ratio: 1000 or 200;(6)Collector-emitter saturation voltage: 2 or 2.5 V;(7)Base-emitter voltage: 2.8 V;(8)Parallel diode forward voltage: 3.5 V. If you want to know more information such as the electrical characteristics about the TIP100G, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationTIP100G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic2V @ 6mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)50A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIP100G
TIP100G
TIP100GOS ND
TIP100GOSND
TIP100GOS



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