TIP100

Transistors Darlington NPN Epitaxial Sil Darl

product image

TIP100 Picture
SeekIC No. : 00217541 Detail

TIP100: Transistors Darlington NPN Epitaxial Sil Darl

floor Price/Ceiling Price

Part Number:
TIP100
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 60 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 60 V Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 50 uA Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 50 uA


Application

PINCONFIGURATION
1.BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR






Specifications

Collector-base voltage (open emitter)
VCBO
max.
60
80
100
V
Collector-emitter voltage (open base)
VCEO
max.
60
80
100
V
Collector current
IC
max.
8.0
A
Total power dissipation up to TC = 25°C
Ptot
max.
80
W
Junction temperature
Tj
max.
150
°C
Collector-emitter saturation voltage
IC = 3 A; IB = 6 mA
VCEsat
max.
2.0
v
D.C. current gain
IC = 3 A; VCE = 4 V
hFE
min.
1.0
k
max.
20
k

Collector-base voltage (open emitter)
VCBO
max.
60
80
100
V
Collector-emitter voltage (open base)
VCEO
max.
60
80
100
V
Emitter-base voltage (open collector)
VEBO
max.
5.0
V
Collector current
IC
max.
8.0
A
Collector peak current
ICM
max.
15
A
Base current
IB
max.
1.0
A
Total power dissipation up to TC = 25°C
Ptot
max.
80
W
Derate above 25°C
max.
0.64
W/°C
Total power dissipation up to TA = 25°C
Ptot
max.
2.0
W
Derate above 25°C
max.
0.016
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
65 to +150
°C





Parameters:

Technical/Catalog InformationTIP100
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 6mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)50A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names TIP100
TIP100
TIP100OS ND
TIP100OSND
TIP100OS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Computers, Office - Components, Accessories
Optoelectronics
Industrial Controls, Meters
Sensors, Transducers
Potentiometers, Variable Resistors
View more