Features: ·HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz·BROAD BAND INTERNALLY MATCHED·HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ·HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage ...
TIM7785-4UL: Features: ·HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz·BROAD BAND INTERNALLY MATCHED·HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ·HERMETICALLY SEALED PACKAGESpecifications CHARACTE...
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Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POW...
Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROA...
DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 3.5 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 23 |
Channel Temperature | Tch | °C | 175 |
Storage | Tstg | °C | -65 to +175 |