Features: ·HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz·HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz·BROAD BAND INTERNALLY MATCHED FET·HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Cu...
TIM5964-25UL: Features: ·HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz·HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz·BROAD BAND INTERNALLY MATCHED FET·HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYM...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
·HIGH POWER
P1dB=44.5dBm at 5.9GHz to 6.4GHz
·HIGH GAIN
G1dB=10.0dB at 5.9GHz to 6.4GHz
·BROAD BAND INTERNALLY MATCHED FET
·HERMETICALLY SEALED PACKAGE
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 20.0 |
Total Power Dissipation (Tc= 25 ) | PT | W | 100 |
Channel Temperature | Tch | 175 | |
Storage | Tstg | -65 to +175 |