Features: · HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz· BROAD BAND INTERNALLYMATCHED FET· HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Dra...
TIM6472-4UL: Features: · HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz· BROAD BAND INTERNALLYMATCHED FET· HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS...
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Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BR...
DescriptionThe TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has fo...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWE...
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 3.5 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 25 |
Channel Temperature | Tch | °C | 175 |
Storage | Tstg | °C | -65 to +175 |