Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWERP1dB=46.5dBm at 6.4GHz to 7.2GHzHIGH GAING1dB=8.0dB at 6.4GHz to 7.2GHz BROADBANDINTERNALLYMATCHEDFET HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Sou...
TIM6472-45SL: Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWERP1dB=46.5dBm at 6.4GHz to 7.2GHzHIGH GAING1dB=8.0dB at 6.4GHz to 7.2GHz BROADBANDINTERNALLYMATCHEDF...
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Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BR...
DescriptionThe TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has fo...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level·HIGH...
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
V V |
15 -5 |
Drain Current Total Power Dissipation (Tc= 25 ) |
IDS PT |
A W |
20 125 |
Channel Temperature Storage Temperature |
Tch Tstg |
175 -65 to +175 |