Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TO...
TIM6472-12UL: Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGEApplicationThe information contained herein i...
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DescriptionThe TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has fo...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWE...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level·HIGH...
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) | ||||||
CHARACTERISTICS | SYMBOL | CONDITIONS | UNIT | MIN. | TYP. | MAX. |
Output Power at 1Db Gain Compression Point |
P1dB | VDS= 10V f = 6.4-7.2GHz |
dBm | 40.5 | 41.5 | - |
Power Gain at 1dB Gain Compression Point |
G1dB | dB | 8.5 | 9.5 | - | |
Drain Current | IDS1 | A | - | 3.2 | 3.8 | |
Gain Flatness | ∆G | dB | - | - | ±0.6 | |
Power Added Efficiency | add | % | - | 39 | - | |
3rd Order Intermodulation Distortion |
IM3 | Two Tone Test Po=30.5dBm (Single Carrier Level) |
dBc | -44 | -47 | - |
Drain Current | IDS2 | A | - | 3.2 | 3.8 | |
Channel Temperature Rise | ∆Tch | VDS X IDS X Rth(c-c) | °C | - | - | 80 |