TIM6472-12UL

Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TO...

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SeekIC No. : 004519300 Detail

TIM6472-12UL: Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGEApplicationThe information contained herein i...

floor Price/Ceiling Price

Part Number:
TIM6472-12UL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/4

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Product Details

Description



Features:

HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE




Application

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.




Specifications

RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1Db Gain
Compression Point
P1dB VDS= 10V
f = 6.4-7.2GHz
dBm 40.5 41.5 -
Power Gain at 1dB Gain
Compression Point
G1dB dB 8.5 9.5 -
Drain Current IDS1 A - 3.2 3.8
Gain Flatness ∆G dB - - ±0.6
Power Added Efficiency add % - 39 -
3rd Order Intermodulation
Distortion
IM3 Two Tone Test
Po=30.5dBm
(Single Carrier Level)
dBc -44 -47 -
Drain Current IDS2 A - 3.2 3.8
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C - - 80



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