Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level·HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltag...
TIM6472-4SL: Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level·HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SE...
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Features: HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BR...
DescriptionThe TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has fo...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWE...
CHARACTERISTICS |
SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
3.5 |
Total Power Dissipation (Tc= 25 ) |
PT |
W |
23.1 |
Channel Temperature |
Tch |
175 | |
Storage temperature |
TSTG |
-65 to +175 |