TIM6472-35SL

The TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 45.5 dBm at 6.4 GHz to 7.2 GHz;(2)high gain: G1db = 8.0 dB at 6.4 GHz to 7.2 GHz;(3)broad band internally matched;(4)hermetically sealed package.

The electrical characteristics of the TIM6472-35SL can be summarized as:(1)transconductance: 1800 ms;(2)pinch-off voltage: -2.0 to -5.0 V;(3)saturated drain current: 5.8 to 7.5 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 2.3 to 3.5 /W.

The RF performance speifications of the TIM6472-35SL can be concluded into some points:(1)output power at 1 dB compression point: 45.0 to 45.5 dBm;(2)power gain at 1 dB compression point: 7.0 to 8.0 dB;(3)drain current: 8.0 to 9.0 A;(4)power added efficiency: 37 %;(5)channel temperature rise: 100 ;(6)3rd order intermodulation distortion: -42 to -45 dBc.

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 26 A;(4)total power dissipation: 115 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM6472-35SL, please download the datasheet in www.seekic.com or www.chinaicmart.com .