TIP125A

The TIP125A is designed as one kind of Si-Epitaxial Planar transistor that has some points of features:(1)Collector current: 5 A;(2)Plastic case: TO-220AB;(3)Weight approx.: 2.2 g;(4)Plastic material has UL classification 94V-0;(5)Standard packaging taped and reeled.

The absolute maximum ratings of the TIP125A can be summarized as:(1)Collector-Emitter-voltage: 60 V;(2)Collector-Base-voltage: 60 V;(3)Emitter-Base-voltage: 50 V;(4)Power dissipation without cooling: 2 W;(5)Power dissipation with cooling: 65 W;(6)Collector current (dc): 5 A;(7)Peak Collector current: 8 A;(8)Base current: 120 mA;(9)Junction temperature: -65 to +150°C;(10)Storage temperature: -65 to +150°C.

The electrical characteristics of this device TIP125A can be summarized as:(1)Collector-Emitter cutoff current: 500 nA;(2)Collector-Base cutoff current: 200 nA;(3)Emitter-Base cutoff current: 2 mA;(4)Collector saturation voltage: 2 or 4 V;(5)Base-Emitter on-voltage: 2.5 V;(6)DC current gain: 1000;(7)Small signal current gain: 4;(8)Collector-Base Capacitance: 200 pF. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .