Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level·HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz·HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz·BROAD BAND INTERNALLY MATCHED FET ·HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT ...
TIM5359-45SL: Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level·HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz·HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz·BROAD BAND INTERNALLY...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level
·HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz
·HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz
·BROAD BAND INTERNALLY MATCHED FET
·HERMETICALLY SEALED PACKAGE
CHARACTERISTICS |
SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
20 |
Total Power Dissipation (Tc= 25 ) |
PT |
W |
125 |
Channel Temperature |
Tch |
175 | |
Storage Temperature |
Tstg |
-65 to +175 |