Features: · HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz· HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz· BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VG...
TIM5964-6UL: Features: · HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz· HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz· BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTIC...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
CHARACTERISTICS |
SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
5.0 |
Total Power Dissipation (Tc= 25) |
PT |
W |
32.6 |
Channel Temperature |
Tch |
175 | |
Storage |
Tstg |
-65 to +175 |