Features: HIGH POWERT P1dB=39.5dBm at 5.3GHz to 5.9GHzHIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSH...
TIM5359-8SL: Features: HIGH POWERT P1dB=39.5dBm at 5.3GHz to 5.9GHzHIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is ...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
HIGH POWERT P1dB=39.5dBm at 5.3GHz to 5.9GHz
HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ) | |||
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 7.0 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 37.5 |
Channel Temperature | Tch | 175 | |
Storage | Tstg | -65 - +175 |