TIP121

Transistors Darlington NPN Power Darlington

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TIP121 Picture
SeekIC No. : 00216685 Detail

TIP121: Transistors Darlington NPN Power Darlington

floor Price/Ceiling Price

US $ .26~.32 / Piece | Get Latest Price
Part Number:
TIP121
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.32
  • $.31
  • $.28
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 80 V Maximum DC Collector Current : 5 A
Maximum Collector Cut-off Current : 200 uA Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Power Dissipation :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 5 A
Package / Case : TO-220AB


Pinout

  Connection Diagram




Description

The TIP121 is designed as one kind of PNP silicon power transistor that has four points of features:(1)Designed for Complementary Use with TIP125, TIP126 and TIP127; (2)65 W at 25°C Case Temperature; (3)5 A Continuous Collector Current; (4)Minimum hFE of 1000 at 3 V, 3 A.

The absolute maximum ratings of the TIP121 can be summarized as:(1)Collector-base voltage (IE = 0): 80 V;(2)Collector-emitter voltage (IB = 0): 80 V;(3)Emitter-base voltage: 5.0 V;(4)Continuous collector current: 5 A;(5)Continuous base current: 0.1 A;(6)Continuous device dissipation at (or below) 25°C case temperature: 65 W;(7)Continuous device dissipation at (or below) 25°C free air temperature: 2.0 W;(8)Unclamped inductive load energy: 50 mJ;(9)Operating junction temperature range: -65 to +150 °C;(10)Storage temperature range: -65 to +150 °C;(11)Lead temperature 3.2 mm from case for 10 seconds: 260 °C.

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 80 V;(2)Collector-emitter cut-off current: 0.5 mA;(3)Collector cut-off current: 0.2 mA;(4)Emitter cut-off current: 2 mA;(5)Forward current transfer ratio: 1000;(6)Collector-emitter saturation voltage: 2 or 4 V;(7)Base-emitter voltage: 2.5 V;(8)Parallel diode forward voltage: 3.5 V. If you want to know more information such as the electrical characteristics about the TIP121, please download the datasheet in www.seekic.com or www.chinaicmart.com.






Parameters:

Technical/Catalog InformationTIP121
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)5A
Power - Max65W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)500A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIP121
TIP121
497 2537 5 ND
49725375ND
497-2537-5



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