TIM5964-16SL

The TIM5964-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 42.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.0 dB at 5.9 GHz to 6.4 GHz;(3)internally matched type;(4)hermetically sealed package;(5)low intermodulation distortion: IM3= -45 dBc at Po 31.5 dBm, single carrier level.

The electrical characteristics of the TIM5964-16SL can be summarized as:(1)transconductance: 3600 ms;(2)pinch-off voltage: -1 to -4.0 V;(3)saturated drain current: 10.5 to 14.0 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 1.5 to 2.0 /W.

The RF performance speifications of the TIM5964-16SL can be concluded into some points:(1)output power at 1 dB compression point: 41.5 to 42.5 dBm;(2)power gain at 1 dB compression point: 7.0 to 8.0 dB;(3)drain current: 4.4 to 5.0 A;(4)power added efficiency: 34 %;(5)channel temperature rise: 80 ;(6)3rd order intermodulation distortion: -42 to -45 dBc;(7)gain flatness: +/- 0.8 dB.

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 14 A;(4)total power dissipation: 75 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM5964-16SL, please download the datasheet in www.seekic.com or www.chinaicmart.com .