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TIM7785-35SL

Features: LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier LevelHIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHzHIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHzBROAD BAND INTERNALLY MATCHED FETHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a...

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TIM7785-35SL: Features: LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier LevelHIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHzHIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHzBROAD BAND INTERNALLY MATC...

TIM7785-35SL Data Sheet

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Part Number:
TIM7785-35SL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

LOW INTERMODULATION DISTORTION
  IM3=-45 dBc at Po= 35.0dBm,
  Single Carrier Level
 HIGH POWER
   P1dB=45.5dBm at 7.7GHz to 8.5GHz
 HIGH GAIN
   G1dB=6.0dB at 7.7GHz to 8.5GHz
 BROAD BAND INTERNALLY MATCHED FET
 HERMETICALLY SEALED PACKAGE




Application

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.




Specifications

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1Db Gain
Compression Point		 P1dB VDS= 10V
f = 7.7 to 8.5GHz
 dBm 45.0 45.5 -
Power Gain at 1dB Gain
Compression Point		 G1dB dB 5.0 6.0 -
Drain Current IDS1 A - 8.0 9.0
Gain Flatness ∆G dB - - ±0.8
Power Added Efficiency add % - 33 -
3rd Order Intermodulation
Distortion		 IM3 Two-Tone Test
Po=36.5dBm
(Single Carrier Level)		 dBc -42 -45 -
Drain Current IDS2 A - 8.0 9.0
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c)   - - 100
Recommended Gate Resistance(Rg) : 28 Ω (Max.)



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