DescriptionThe TIP140F is designed as the NPN silicon power darlington that has three points of features:(1)collector-emitter sustaining voltage: VCE(sus) = 60 V (min);(2)collector-emitter saturation voltage: VCE(sat) = 2.0 V (max.) @ Ic=5.0 A;(3)monolithic construction with built-in base-emitter ...
TIP140F: DescriptionThe TIP140F is designed as the NPN silicon power darlington that has three points of features:(1)collector-emitter sustaining voltage: VCE(sus) = 60 V (min);(2)collector-emitter saturatio...
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The TIP140F is designed as the NPN silicon power darlington that has three points of features:(1)collector-emitter sustaining voltage: VCE(sus) = 60 V (min);(2)collector-emitter saturation voltage: VCE(sat) = 2.0 V (max.) @ Ic=5.0 A;(3)monolithic construction with built-in base-emitter shunt resistor.
The absolute maximum ratings of the TIP140F can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 5 V;(4)continuous collector current:10 A;(5)peak collector current: 15 A;(6)continuous base current: 0.5 A;(7)continuous device dissipation at (or below) 25 case temperature: 125 W;(8)operating junction temperature range: -65 to +150 ;(11)storage temperature range: -65 to +150 ;(12)total power dissipation @ Tc=25 : 125 W. If you want to know more information such as the electrical characteristics about the TIP140F, please download the datasheet in www.seekic.com or www.chinaicmart.com.