TIM7785-60SL Selling Leads, Price trend, TIM7785-60SL DataSheet download, circuit diagram from SeekIC.com

Features: LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier LevelHIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHzHIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHzBROAD BAND INTERNALLY MATCHED FETHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as ...

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SeekIC No. : 004519314 Detail

TIM7785-60SL: Features: LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier LevelHIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHzHIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHzBROAD BAND INTERNALLY MAT...

TIM7785-60SL Data Sheet

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Part Number:: TIM7785-60SL
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/1

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Recent History
What is this?

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Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POW...
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DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...

Product Details

Description

Features:

LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz
HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE

Application

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

Specifications

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 )
CHARACTERISTICS	SYMBOL	UNIT	RATING
Drain-Source Voltage	V_DS	V	15
Gate-Source Voltage	V_GS	V	-5
Drain Current	I_DS	A	26
Total Power Dissipation (Tc= 25 °C)	P_T	W	187
Channel Temperature	T_ch		175
Storage	T_stg		-65 to +175

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TIM7785-60SL

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