Features: · LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level · HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz· HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz· BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SEALED PACKAGESpecifications Item SYMBOL UNIT RAT...
TIM5964-30SL: Features: · LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level · HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz· HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz· BROAD BAND IN...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
· LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Po= 34.5 dBm,
Single Carrier Level
· HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz
· HIGH GAIN
G1dB=8.0dB at 5.9GHz to 6.4GHz
· BROAD BAND INTERNALLY MATCHED FET
· HERMETICALLY SEALED PACKAGE
Item |
SYMBOL |
UNIT |
RATING |
Drain - source voltage |
VDS |
V |
15 |
Gate - source voltage |
VGS |
V |
-5 |
Drain current |
IDS |
A |
20 |
Total Power dissipation |
PT |
W |
115.4 |
Channel temperature |
Tch |
175 | |
Storage |
Tstg |
-65 to +175 |