TIP120A

The TIP120A is designed as one kind of PNP silicon power transistor that has four points of features:(1)Designed for Complementary Use with TIP125, TIP126 and TIP127; (2)65 W at 25°C Case Temperature; (3)5 A Continuous Collector Current; (4)Minimum hFE of 1000 at 3 V, 3 A.

The absolute maximum ratings of the TIP120A can be summarized as:(1)Collector-base voltage (IE = 0): 80 V;(2)Collector-emitter voltage (IB = 0): 80 V;(3)Emitter-base voltage: 5.0 V;(4)Continuous collector current: 5 A;(5)Continuous base current: 0.1 A;(6)Continuous device dissipation at (or below) 25°C case temperature: 65 W;(7)Continuous device dissipation at (or below) 25°C free air temperature: 2.0 W;(8)Unclamped inductive load energy: 50 mJ;(9)Operating junction temperature range: -65 to +150 °C;(10)Storage temperature range: -65 to +150 °C;(11)Lead temperature 3.2 mm from case for 10 seconds: 260 °C.

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 80 V;(2)Collector-emitter cut-off current: 0.5 mA;(3)Collector cut-off current: 0.2 mA;(4)Emitter cut-off current: 2 mA;(5)Forward current transfer ratio: 1000;(6)Collector-emitter saturation voltage: 2 or 4 V;(7)Base-emitter voltage: 2.5 V;(8)Parallel diode forward voltage: 3.5 V. If you want to know more information such as the electrical characteristics about the TIP120A, please download the datasheet in www.seekic.com or www.chinaicmart.com.