TIP122FP

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 5 A
Package / Case : TO-220FP


Specifications

Symbol	Parameter		Value	Unit
		NPN	TIP122FP
		PNP	TIP127FP
VCBO	Collector-Base Voltage (IE = 0)		100	V
VCEO	Collector-Emit ter Voltage (IB = 0)		100	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		5	A
ICM	Collector Peak Current		8	A
IB	Base Current		0.1	A
Ptot	Total Dissipation at Tcase 25                                Tamb 25		29 2	W W
Tstg	Storage Temperature		-65 to 150	oC
Tj	Max. Operating Junction Temperature		150	oC

Description

The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications.

The complementary PNP type is TIP127FP.

Parameters:

Technical/Catalog Information	TIP122FP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	5A
Power - Max	29W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TIP122FP TIP122FP 497 6761 5 ND 49767615ND 497-6761-5