Features: · HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz· BROAD BAND INTERNALLYMATCHED FET· HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS...
TIM5964-12UL: Features: · HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz· BROAD BAND INTERNALLYMATCHED FET· HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERIST...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 10.0 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 62.5 |
Channel Temperature | Tch | °C | 175 |
Storage | Tstg | °C | -65 to +175 |